03000EC304052001 Pages:

Reg No.: Name:

Max. Marks: 100

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APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY
Sixth Semester B.Tech Degree Regular and Supplementary Examination July 2021

Course Code: EC304
Course Name: VLSI
PARTA
Answer any two full questions, each carries 15 marks
With a neat sketch, explain Czochralski crystal growth mechanism.

Explain the N-well CMOS IC Fabrication Sequence.
After a pre-deposition step, it is found that 5105 phosphorus atoms cm” are
introduced in a p-type silicon sample doped with 1010 acceptor atoms em”,
Calculate the junction depth, when the drive-in diffusion is performed at 1200°C
for two hours. )0-_- 2 ‏اہ‎ 12000 C).
With a neat sketch, explain the process of vapour phase epitaxy.
Solve the Fick’s law of diffusion, corresponding to pre-deposition diffusion and
drive in diffusion.
Explain the process of molecular beam epitaxy (MBE) in detail.
PART 13
Answer any two full questions, each carries 15 marks
Explain the various types of power dissipation in CMOS inverter.

Realize an XNOR gate using
i. NMOS pass transistor logic
ii. Complementary pass transistor logic
Draw the circuit diagram, stick diagram and layout of a CMOS NOR gate
Implement the function Y= A’B+AB’ and Z=AB+A’B’ using pass transistor
logic.
Explain the working of a transmission gate and implement 4x1 multiplexer using
transmission gates.
Implement the function Y=[(A+B)C+DE] ` using static CMOS logic
PART C

Answer any two full questions, each carries 20 marks

Explain the read and write operation of a six transistor CMOS SRAM cell.

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Duration: 3 Hours

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