No. of Pages: 2 SLOT B

APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY
FIRST SEMESTER M.TECH DEGREE EXAMINATION, APR 2021/DEC 2021

Branch: Electronics & Communication
Stream: VLSI & Embedded Systems
Course Code & Name: 01EC6603 VLSI Technology & Design

Answer any two full questions from each part

Limit answers to the required points.

Max. Marks: 60 Duration: 3 hours

PART A

1. a. Obtain the Drain characteristics & Transfer characteristics of n-channel (4.5 marks)
Enhancement type MOSFET and explain its regions of operation.

b. What is EGS? Explain the production of EGS from Hydrogen reduction (4.5 marks)
of TrichloroSilane.

2. ൭. Explain the impact of Channel Length Modulation on Drain Current ‏سا‎ (4.5 marks)
Saturation region of a MOSFET.

b. Give the principle involved in Molecular Beam Epitaxy. Explain MBE (4.5 marks)
with a neat schematic of MBE Growth System.

3. ௨ What are Small Geometry Effects? Briefly explain the following Small (4.5 marks)
Geometry Effects:

i)Sub threshold Conduction & DIBL ii) Punch through

b. Give short notes on Dry Etching & Wet Chemical Etching. Explain the (4.5 marks)
significance of DC and AC Plasma excitation in etching Process.

PART B

4. ൭. Give the significance of the Physical Vapour Deposition methods 1௩ 10 (4.5 marks)
Processing. Explain Sputtering with a neat schematic diagram of
sputtering system.

b. Explain the functioning of Depletion-mode load NMOS Inverter. Obtain (4.5 marks)
the inverter characteristics & specify its limitations.