16

17

18

19

20

0800ECT201122006

b) What is base width modulation? How does it affect the input and output
characteristics of a BJT?

a) Derive the equation for the built in potential of a PN junction under thermal
equilibrium.

b) A PN junction, doped on one side with ۹ ണ്‌ Boron atoms and the other
side with 10'° ബില്‌ Arsenic atoms at 300 K. (1; = 1.5x10!°cm? at 300 ‏کر‎
‎and €,=11.9 for Silicon). Calculate, the built in potential.

௦) The following parameters are given for a PNP transistor. Igp= 2 mA, [एण
0.01 mA, [त= 1.98 mA and [त= 0.001mA. Determine

i. The base transport factor
ii. The emitter injection efficiency

111. ൨൭൧0

Module 4
a) Draw and explain the C-V Characteristics of an Ideal MOS capacitor. Derive
the expression for threshold voltage.
b) Draw the energy band diagrams, of an ideal MOS capacitor under
equilibrium, and strong inversion conditions.
a) Draw the structure of n channel MOSFET. Derive the expression for drain
current of a MOSFET in the two regions of operation. What are the assumptions
made in deriving the expression?
b) What is meant by body effect in MOSFET? How does it affect the threshold
voltage of the MOSFET?
Module 5
a) What is meant by scaling in MOSFETs? Explain the challenges in device
scaling?
b) Explain the concept of constant voltage scaling and its limitations.
a) What is meant by DIBL in MOSFETs? How does it affect the threshold
voltage of a MOSFET?
b) Explain the concepts of velocity saturation and hot carrier effects in a
MOSFET.

Page 3 of 3

(4)

(7)

(3)

(4)

(8)

(6)
(10)

(4)

(7)

(7)
(7)

(7)