Semester : SEMESTER 3
Subject : Solid State Devices
Year : 2018
Term : APRIL
Scheme : 2015 Full Time
Course Code : EC 203
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PART C
Answer any two full questions, each carries 20 marks
Derive an expression for emitter injection efficiency of a transistor.
Explain early effect.
Derive the relationship between © and 3 of a transistor.
Explain the principle of operation of MOS capacitor with suitable energy band
diagrams.
Define threshold voltage of MOS capacitor.
Draw and explain the C-V characteristics of a MOS capacitor.
Explain the drain characteristics and transfer characteristics of an enhancement
type MOSFET with suitable diagrams.
Explain the principle of operation of FinFET.
Draw the minority carrier distribution in a PNP transistor and explain why the
minority concentration in the base region is linear.
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