Semester : SEMESTER 3
Subject : Solid State Devices
Year : 2017
Term : DECEMBER
Scheme : 2015 Full Time
Course Code : EC 203
Page:2
C7114
PART C
Answer any two full questions, each carries 20 marks.
Derive the expression for minority carrier distribution and terminal currents in a
transistor,
Describe early effect in a transistor.
What are the factors which cause base current in a transistor?
With the help of necessary band diagrams, explain equilibrium, accumulation,
depletion and inversion stages of a MOS capacitor.
What are the effect of real surfaces of a MOS capacitor.
Draw and explain the structure of FINFET.
Derive the expression for drain current of a MOSFET.
Draw and explain the transfer characteristics of an n-channel MOSFET.
A Silicon n-channel MOSFET has p,= 600 cm?/V-sec, ஜே 121017 F/em’, 7-50
um, L=10 um and Vrp= 0.8V. Find he drain current when
1) ۷ح۷ and Vps=!1V 11) സ്സ് and Vps=5V
KK یاد ید
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