a)

b)

0)

02000EC203092001

Na= 5x 1001073. The oxide thickness is 100 ^° and the effective interface charge
is Qi= 6.4107 വണ്‌. Work function difference is given as Mp; = -0.95 V.
Calculate,

i) Surface potential needed to make the surface strongly inverted.

ii) Flat band voltage

iii) Threshold voltage

(relative permittivity ¢,= 11.9 and n= 1.5x10'°cm™ for Silicon at 300 K)
Derive the expression for the drain current of a MOSFET. How will the equation
modifies in
1) Linearregion 11) Saturation region of operations.

What is base width modulation? How does it affect the BJT characteristics in CE
and CB configurations?
Plot the distribution of minority carriers in the bulk of a PNP transistor in active

mode of operation.

Page 3 of 3

(10)

(6)

(4)