Semester : SEMESTER 7
Subject : Microwave Devices and Circuits
Year : 2019
Term : MAY
Scheme : 2015 Full Time
Course Code : EC 461
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Max. Marks: 100
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APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY
SEVENTH SEMESTER B.TECH DEGREE EXAMINATION(S), MAY 2019
Course Code: EC461
Course Name: MICROWAVE DEVICES AND CIRCUITS
PARTA
Answer any two full questions, each carries 15 marks.
What are the limitations of conventional solid state devices at microwave?
Explain modes of operation of Gunn diode
State Gunn effect.
Design a one port negative resistance oscillator.
Design a single stage Transistor Amplifier used in microwave circuits
What is MESFET ? Mention its structure and operation.
An IMPATT diode has carrier drift velocity Va= 3 x 10’ cm/s, Drift region length
L = 6൩. Maximum operating voltage Vomax = 100۷, Maximum operating current
Tomax = 200mA, Efficiency 1 = 15%, Breakdown voltage م۷ = 90४. Find
maximum CW output power in watts and the resonant frequency in gigahertz
PART B
Answer any two full questions, each carries 15 marks.
For a microwave circuit , discuss the equivalent voltage and currents .
Derive expressions for S parameters in terms of Z parameters for a 2-port
network.
Explain the principle of double stub matching
What are the steps required to transfer a LPF from HPF .explain.
List the Kuroda’s identity.
Design a low-pass composite filter with a cut-off frequency of 2MHz and
impedances of 75Q. Place the infinite attenuation pole at 2.05MHz.
PART C
Answer any two full questions, each carries 20 marks.
Analyse the hybrid MMICs
Discuss Stripline in planar transmission and also find the Quality factor.
What is Monolithic MICs and Discuss its construction.
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Duration: 3 Hours
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